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STI260N6F6 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STI260N6F6
Description  N-channel 60 V, 0.0024 廓, 120 A STripFET??VI DeepGATE??Power MOSFET in TO-220 and I짼PAK packages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STI260N6F6 Datasheet(HTML) 3 Page - STMicroelectronics

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STI260N6F6, STP260N6F6
Electrical ratings
Doc ID 17467 Rev 5
3/14
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
60
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
120
A
ID
Drain current (continuous) at TC = 100 °C
120
A
IDM
(1)
1.
Current limited by package.
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25 °C
300
W
Derating factor
2
W/°C
Tstg
Storage temperature
- 55 to 175
°C
Tj
Operating junction temperature
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
0.5
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C


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