DIM200PHM33-F000 datasheet(3/8 Pages) DYNEX

Part #	DIM200PHM33-F000

Description	Half Bridge IGBT Module

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Manufacturer	DYNEX [Dynex Semiconductor]

Direct Link	http://www.dynexsemi.com

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DIM200PHM33-F000

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures

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ELECTRICAL CHARACTERISTICS

Tcase = 25°C unless stated otherwise.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

ICES

Collector cut-off current

VGE = 0V, VCE = VCES

1

mA

VGE = 0V, VCE = VCES, Tcase = 125°C

15

mA

IGES

Gate leakage current

VGE = ± 20V, VCE = 0V

400

nA

VGE(TH)

Gate threshold voltage

IC = 20mA, VGE = VCE

5.5

6.5

7.0

V

VCE(sat)

†

Collector-emitter

saturation voltage

VGE = 15V, IC = 200A

2.8

V

VGE = 15V, IC = 200A, Tj = 125°C

3.6

V

IF

Diode forward current

DC

200

A

IFM

Diode maximum forward

current

tp = 1ms

400

A

VF

†

Diode forward voltage

IF = 200A

2.9

V

IF = 200A, Tj = 125°C

3.0

V

Cies

Input capacitance

VCE = 25V, VGE = 0V, f = 1MHz

36

nF

Qg

Gate charge

±15V

5

μC

Cres

Reverse transfer capacitance

VCE = 25V, VGE = 0V, f = 1MHz

0.55

nF

LM

Module inductance

40

nH

RINT

Internal transistor resistance

500

μ



SCData

Short circuit current, ISC

Tj = 125°C, VCC = 2500V

tp ≤ 10μs, VGE ≤ 15V

VCE (max) = VCES – L

* x dI/dt

IEC 60747-9

930

A

Note:

†

Measured at the auxiliary terminals

* L is the circuit inductance + LM

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