SEMICONDUCTOR

DGT409BCA

8/11

www.dynexsemi.com

0

1

2

3

4

5

6

7

8

9

0

10

20

30

40

50

60

Peak forward gate current, I

Conditions:

T

C

dI

dI

V

Rise time -t

r

Delay time -t

d

0

500

1000

1500

2000

2500

3000

3500

4000

4500

0

200

400

600

800

1000 1200 1400 1600

On-state current, I

Conditions:

T

dI

=

1500V

, C

S

=

2µF

Fig.14 Switching times vs peak forward gate current

Fig.15 Maximum turn-off energy vs on-state current

0

500

1000

1500

2000

2500

3000

3500

4000

4500

0

10

20

30

40

50

60

Rate of rise of reverse gate current, dI

Conditions:

T

I

V

V

V

0

2

4

6

8

10

12

14

16

18

0

100

200

300

400

500

600

700

800

On-state current,I

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Conditions:

T

R

V

t

gs

t

gf

Fig.16 Turn-off energy vs rate of rise of reverse gate

current

Fig.17 Gate storage time and fall time vs on-state current