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DGT409BCA Datasheet(PDF) 8 Page - Dynex Semiconductor |
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DGT409BCA Datasheet(HTML) 8 Page - Dynex Semiconductor |
8 / 11 page SEMICONDUCTOR DGT409BCA 8/11 www.dynexsemi.com 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 Peak forward gate current, I FGM - (A) Conditions: T j = 115° C, IT = 400A, C S = 2µF, RS = 20, dI T/dt = 150A/µs, dI FG/dt = 30A/µs, V D = 3000V Rise time -t r Delay time -t d 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 200 400 600 800 1000 1200 1400 1600 On-state current, I T - (A) Conditions: T j = 115° C,RS = 20, dI GG/dt = 20A/µs, CS = 2µF V D = 1500V , C S = 2µF Fig.14 Switching times vs peak forward gate current Fig.15 Maximum turn-off energy vs on-state current 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 10 20 30 40 50 60 Rate of rise of reverse gate current, dI GQ/dt - (A/µs) Conditions: T j = 115° C, RS = 10, I T = 800A, CS = 2µF V D = 4500V V D = 3000V V D = 1500V 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 600 700 800 On-state current,I T - (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Conditions: T j = 115° C, CS = 2F, R S = 20, dIGQ/dt = 20A/s V DM = 3000V t gs t gf Fig.16 Turn-off energy vs rate of rise of reverse gate current Fig.17 Gate storage time and fall time vs on-state current |
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