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DG406BP25 Datasheet(PDF) 9 Page - Dynex Semiconductor |
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DG406BP25 Datasheet(HTML) 9 Page - Dynex Semiconductor |
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9 / 19 page  DG406BP25 9/19 0 250 500 750 1000 1250 1500 On-state current I T - (A) 4.0 3.0 2.0 1.0 0 Conditions: T j = 125˚C, IFGM = 30A, C S = 1.0µF, VD = 2000V, R S = 10 Ohms, dIT/dt = 300A/µs t d t r 0 2040 6080 Peak forward gate current I FGM - (A) FIG 14 DELAY TIME & RISE TIME PEAK FORWARD 4.0 3.0 2.0 1.0 0 Conditions: T j = 125˚C, IT = 1000A, C S = 1.0µF, R S = 10 Ohms, dI/dt = 300A/µs, dI FG/dt = 30A/µs, V D = 2000V 5.0 t d t r Fig.13 Delay time & rise time vs turn-on current Fig.14 Delay time & rise time vs peak forward gate current |
Similar Part No. - DG406BP25_05 |
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Similar Description - DG406BP25_05 |
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