MAT02EH datasheet(2/12 Pages) AD

Part #	MAT02EH

Description	Low Noise, Matched Dual Monolithic Transistor

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REV. C

–2–

ELECTRICAL CHARACTERISTICS

MAT02A/E

MAT02F

Parameter

Symbol

Conditions

Min

Typ

Max

Min

Typ

Max

Units

Current Gain

hFE

IC = 1 mA

1

500

605

400

605

IC = 100 µA

500

590

400

590

IC = 10

µA

400

550

300

550

IC = 1

µA

300

485

200

485

Current Gain Match

∆h

FE

10

µA ≤ I

C ≤ 1 mA

2

0.5

2

0.5

4

%

Offset Voltage

VOS

VCB = 0, 1

µA ≤ I

C

≤ 1 mA3

10

50

80

150

µV

Offset Voltage

∆V

OS/

∆V

CB

0

≤ V

CB

≤ V

MAX,

4

10

25

10

50

µV

Change vs. VCB

1

µA ≤ I

C ≤ 1 mA

3

10

25

10

50

µV

Offset Voltage Change

∆V

OS/

∆I

C

VCB = 0 V

5

25

5

50

µV

vs. Collector Current

1

µA ≤ I

C

≤ 1 mA3

525

5

50

µV

Offset Current

Change vs. VCB

∆I

OS/

∆V

CB

0

≤ V

CB

≤ V

MAX

30

70

30

70

pA/V

Bulk Resistance

rBE

10

µA ≤ I

C

≤ 10 mA5

0.3

0.5

0.3

0.5

Ω

Collector-Base

Leakage Current

ICBO

VCB = VMAX

25

200

25

400

pA

Collector-Collector

Leakage Current

ICC

VCC = VMAX

5, 6

35

200

35

400

pA

Collector-Emitter

VCE = VMAX

5, 6

Leakage Current

ICES

VBE = 0

35

200

35

400

pA

Noise Voltage Density

en

IC = 1 mA, VCB = 0

7

fO = 10 Hz

1.6

2

1.6

3

nV/

√Hz

fO = 100 Hz

0.9

1

0.9

2

nV/

√Hz

fO = 1 kHz

0.85

1

0.85

2

nV/

√Hz

fO = 10 kHz

0.85

1

0.85

2

nV/

√Hz

Collector Saturation

Voltage

VCE(SAT)

IC = 1 mA, IB = 100 µA

0.05

0.1

0.05

0.2

V

Input Bias Current

IB

IC = 10

µA25

34

nA

Input Offset Current

IOS

IC = 10

µA

0.6

1.3

nA

Breakdown Voltage

BVCEO

40

V

Gain-Bandwidth Product

fT

IC = 10 mA, VCE = 10 V

200

MHz

Output Capacitance

COB

VCB = 15 V, IE = 0

23

pF

Collector-Collector

Capacitance

CCC

VCC = 0

35

pF

NOTES

1Current gain is guaranteed with Collector-Base Voltage (V

CB) swept from 0 to VMAX at the indicated collector currents.

2Current gain match (

∆h

FE) is defined as:

∆h

FE =

3Measured at I

C = 10

µA and guaranteed by design over the specified range of I

C.

4This is the maximum change in V

OS as VCB is swept from 0 V to 40 V.

5Guaranteed by design.

6I

CC and ICES are verified by measurement of I CBO.

7Sample tested.

Specifications subject to change without notice.

100 (

∆I

B) (hFE min)

IC

MAT02–SPECIFICATIONS

(@ VCB = 15 V, IC = 10 A, TA = 25 C, unless otherwise noted.)

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