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BUK9Y153-100E Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK9Y153-100E Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors BUK9Y153-100E N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 BUK9Y153-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 20 February 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 537 716 pF Coss output capacitance - 59 71 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15 - 46 63 pF td(on) turn-on delay time - 6 - ns tr rise time - 10.9 - ns td(off) turn-off delay time - 10 - ns tf fall time VDS = 80 V; RL = 10 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C - 7.9 - ns Source-drain diode VSD source-drain voltage IS = 2 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.81 1.2 V trr reverse recovery time - 26 - ns Qr recovered charge IS = 2 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 28 - nC 003aai764 0 2.5 5 7.5 10 0 4 8 12 16 20 VDS (V) ID ID (A) (A) 2.6 V 2.6 V 2.8 V 2.8 V VGS = 3 V VGS = 3 V 3.5 V 3.5 V 10 V 10 V Tj = 25 °C; tp = 300 μs Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values 003aai765 0 100 200 300 0 2 4 6 8 10 VGS(V) RDSon (mΩ) Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values |
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