NXP Semiconductors

BUK9Y153-100E

N-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56

BUK9Y153-100E

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Product data sheet

20 February 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

input capacitance

-

537

716

pF

output capacitance

-

59

71

pF

reverse transfer

capacitance

-

46

63

pF

turn-on delay time

-

6

-

ns

rise time

-

10.9

-

ns

turn-off delay time

-

10

-

ns

fall time

-

7.9

-

ns

Source-drain diode

source-drain voltage

-

0.81

1.2

V

reverse recovery time

-

26

-

ns

recovered charge

-

28

-

nC

003aai764

0

2.5

5

7.5

10

0

4

8

12

16

20

(A)

(A)

2.6 V

2.6 V

2.8 V

2.8 V

3.5 V

3.5 V

10 V

10 V

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

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0

100

200

300

0

2

4

6

8

10

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values