BUK9Y8R5-80E datasheet(1/13 Pages) NXP

Part #	BUK9Y8R5-80E

Description	N-channel 80 V, 8.5 m廓 logic level MOSFET in LFPAK56

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Manufacturer	NXP [NXP Semiconductors]

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BUK9Y8R5-80E

N-channel 80 V, 8.5 mΩ logic level MOSFET in LFPAK56

20 February 2013

Product data sheet

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1. General description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS

technology. This product has been designed and qualified to AEC Q101 standard for use

in high performance automotive applications.

2. Features and benefits

• Q101 compliant

• Repetitive avalanche rated

• Suitable for thermally demanding environments due to 175 °C rating

• True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C

3. Applications

• 12 V, 24 V and 48 V Automotive systems

• Motors, lamps and solenoid control

• Transmission control

• Ultra high performance power switching

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

80

V

ID

drain current

VGS = 5 V; Tmb = 25 °C; Fig. 1

[1]

-

100

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

238

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11

-

6.3

8.5

mΩ

Dynamic characteristics

QGD

gate-drain charge

VGS = 5 V; ID = 25 A; VDS = 64 V;

Tj = 25 °C; Fig. 13; Fig. 14

-

17.1

-

nC

[1] Continuous current is limited by package.

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BUK9Y8R5-80E Datasheet(PDF) 1 Page - NXP Semiconductors

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