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AOWF412 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOWF412 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 7 page  AOWF412 Symbol Min Typ Max Units BVDSS 100 V VDS=100V, VGS=0V 10 TJ=55°C 50 IGSS 100 nA VGS(th) Gate Threshold Voltage 2.6 3.2 3.8 V ID(ON) 170 A 13.2 15.8 TJ=125°C 25 30 15.5 19.4 m Ω gFS 30 S VSD 0.65 1 V IS 40 A Ciss 2150 2680 3220 pF Coss 180 260 340 pF Crss 60 100 140 pF Rg 0.5 1 1.5 Ω Qg(10V) 36 45 54 nC Qgs 14 17 20 nC Qgd 9 15 21 nC tD(on) 19 ns t 16 ns Reverse Transfer Capacitance VGS=0V, VDS=50V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Forward Transconductance Diode Forward Voltage Static Drain-Source On-Resistance IS=1A,VGS=0V VDS=5V, ID=20A RDS(ON) IDSS µA VDS=VGS ,ID=250µA VDS=0V, VGS= ±25V Zero Gate Voltage Drain Current Gate-Body leakage current m Ω VGS=7V, ID=20A Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=50V, ID=20A Gate Source Charge Gate Drain Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time V =10V, V =50V, R =2.5 Ω, tr 16 ns tD(off) 27 ns tf 10 ns trr 15 22 29 ns Qrr 67 96 125 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Turn-Off Fall Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev0: August 2010 www.aosmd.com Page 2 of 7 |
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