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AOW25S65 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOW25S65 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOW25S65/AOWF25S65 Symbol Min Typ Max Units 650 - - 700 750 - - - 1 - 10 - IGSS Gate-Body leakage current - - ±100 n Α VGS(th) Gate Threshold Voltage 2.6 3.3 4 V - 0.165 0.19 Ω - 0.47 0.53 Ω VSD - 0.84 - V IS Maximum Body-Diode Continuous Current - - 25 A ISM - - 104 A Ciss - 1278 - pF Coss - 87 - pF Co(er) - 64.5 - pF Co(tr) - 236.7 - pF Crss - 1.4 - pF Rg - 4.9 - Ω Qg - 26.4 - nC Qgs - 6.2 - nC Qgd - 9.5 - nC tD(on) - 29 - ns tr - 30 - ns tD(off) - 112 - ns tf - 34 - ns trr - 408 - ns Irm - 33 - A Qrr - 8.27 - µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=12.5A,dI/dt=100A/µs,VDS=400V IF=12.5A,dI/dt=100A/µs,VDS=400V VGS=10V, VDS=400V, ID=12.5A, RG=25Ω Total Gate Charge VGS=10V, VDS=480V, ID=12.5A Gate Source Charge Gate Drain Charge Body Diode Reverse Recovery Charge IF=12.5A,dI/dt=100A/µs,VDS=400V Maximum Body-Diode Pulsed Current C Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime Body Diode Reverse Recovery Time Peak Reverse Recovery Current Turn-Off Fall Time RDS(ON) Static Drain-Source On-Resistance IS=7.5A,VGS=0V, TJ=25°C Diode Forward Voltage VGS=10V, ID=12.5A, TJ=25°C VGS=10V, ID=12.5A, TJ=150°C Reverse Transfer Capacitance Effective output capacitance, time related I SWITCHING PARAMETERS Input Capacitance VGS=0V, VDS=100V, f=1MHz Output Capacitance VGS=0V, VDS=100V, f=1MHz Gate resistance VGS=0V, VDS=0V, f=1MHz Effective output capacitance, energy related H Zero Gate Voltage Drain Current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions ID=250µA, VGS=0V, TJ=150°C IDSS µA VDS=650V, VGS=0V V BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C VGS=0V, VDS=0 to 480V, f=1MHz VDS=5V,ID=250µA VDS=520V, TJ=150°C VDS=0V, VGS=±30V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=5A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. Rev0: Dec 2011 www.aosmd.com Page 2 of 6 |
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