AOT2916L datasheet(2/7 Pages) AOSMD

Part #	AOT2916L

Description	100V N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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AOT2916L/AOTF2916L

Symbol

Min

Typ

Max

Units

BVDSS

100

V

VDS=100V, VGS=0V

1

TJ=55°C

5

IGSS

±100

nA

VGS(th)

Gate Threshold Voltage

1.6

2

2.7

V

ID(ON)

50

A

28

34

TJ=125°C

51

62

35

43.5

m

Ω

gFS

28

S

VSD

0.75

1

V

IS

23

A

Ciss

870

pF

Coss

68

pF

Crss

3.5

pF

Rg

7

Ω

Qg(10V)

12.5

20

nC

Qg(4.5V)

5.5

10

nC

Qgs

2.5

nC

Qgd

2

nC

tD(on)

7.5

ns

t

3.5

ns

IDSS

µA

Zero Gate Voltage Drain Current

m

Ω

On state drain current

VGS=10V, VDS=5V

VGS=10V, ID=10A

Gate-Body leakage current

VDS=VGS，ID=250µA

VDS=0V, VGS=±20V

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=3A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

Forward Transconductance

Turn-On Rise Time

IS=1A,VGS=0V

VDS=5V, ID=10A

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS=0V, VDS=50V, f=1MHz

DYNAMIC PARAMETERS

V

=10V, V =50V, R =5

Ω,

Gate resistance

VGS=0V, VDS=0V, f=1MHz

VGS=10V, VDS=50V, ID=10A

Turn-On DelayTime

Total Gate Charge

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

Total Gate Charge

tr

3.5

ns

tD(off)

23

ns

tf

5.5

ns

trr

20

ns

Qrr

88

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=50V, RL=5Ω,

RGEN=3Ω

Turn-Off Fall Time

IF=10A, dI/dt=500A/µs

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Time

IF=10A, dI/dt=500A/µs

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current limited by package.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev 0 : Oct. 2012

www.aosmd.com

Page 2 of 7

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