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AOT22N50 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT22N50 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 22A RDS(ON) (at VGS=10V) < 0.26 Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT22N50L&AOTF22N50L Symbol The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 600V@150℃ AOT22N50 AOTF22N50 G D S Top View TO-220F TO-220 G D S G D S AOT22N50 AOTF22N50 Symbol VDS VGS IDM IAR EAR EAS Peak diode recovery dv/dt dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. 22* 15 15* 2.5 417 50 3.3 0.4 °C/W Units A °C mJ W W/ oC AOT22N50 AOTF22N50 0.5 -- °C/W 65 65 0.3 °C/W 300 -55 to 150 °C Thermal Characteristics Parameter Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Junction and Storage Temperature Range V ±30 Gate-Source Voltage V/ns mJ Repetitive avalanche energy C TC=100°C 5 A 88 Pulsed Drain Current C Continuous Drain Current TC=25°C ID 7 22 V Units Parameter Drain-Source Voltage 500 AOT22N50 AOTF22N50 Derate above 25 oC Maximum Junction-to-Ambient A,D Maximum Junction-to-Case Avalanche Current C 735 Single plused avalanche energy G 1470 Power Dissipation B PD TC=25°C Maximum Case-to-sink A G D S Top View TO-220F TO-220 G D S G D S AOT22N50 AOTF22N50 Rev1: Dec 2011 www.aosmd.com Page 1 of 6 |
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