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AOT8N65 Datasheet(PDF) 4 Page - Alpha & Omega Semiconductors |
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AOT8N65 Datasheet(HTML) 4 Page - Alpha & Omega Semiconductors |
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4 / 6 page  AOT8N65/AOTF8N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.01 0.1 1 10 100 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT8N65 (Note F) 100 µ 10ms 1ms DC RDS(ON) limited TJ(Max)=150°C TC=25°C 10 µs 0 3 6 9 12 15 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=520V ID=8A 1 10 100 1000 10000 0.1 1 10 100 VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss 0.01 0.1 1 10 100 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF8N65 (Note F) 10 µs 10ms 1ms 0.1s DC RDS(ON) limited TJ(Max)=150°C TC=25°C 100 µs 1s 0 2 4 6 8 10 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev3: Jul 2011 www.aosmd.com Page 4 of 6 |
Similar Part No. - AOT8N65 |
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