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AON7611 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON7611 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 11 page AON7611 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.5 2 2.5 V ID(ON) 20 A 40 50 TJ=125°C 64 80 53 70 m Ω gFS 11 S VSD 0.79 1 V IS 9.5 A Ciss 170 pF Coss 35 pF Crss 23 pF Rg 1.7 3.5 5.3 Ω Qg(10V) 4.05 10 nC Qg(4.5V) 2 6 nC Qgs 0.55 nC Qgd 1 nC tD(on) 4.5 ns t 1.5 ns Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time V =10V, V =15V, R =3.75 Ω, Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=10V, VDS=15V, ID=4A Gate Source Charge Gate Drain Charge Total Gate Charge RDS(ON) Static Drain-Source On-Resistance m Ω IS=1A,VGS=0V VDS=5V, ID=4A VGS=4.5V, ID=3A VDS=VGS, ID=250µA VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage N-channel Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=4A Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS tr 1.5 ns tD(off) 18.5 ns tf 15.5 ns trr 7.5 ns Qrr 2.5 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=3.75Ω, RGEN=3Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 1: Dec 2011 www.aosmd.com Page 2 of 11 |
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