AON7611

Symbol

Min

Typ

Max

Units

30

V

1

5

±100

nA

Gate Threshold Voltage

1.5

2

2.5

V

20

A

40

50

64

80

53

70

m

Ω

11

S

0.79

1

V

9.5

A

170

pF

35

pF

23

pF

1.7

3.5

5.3

Ω

4.05

10

nC

2

6

nC

0.55

nC

1

nC

4.5

ns

t

1.5

ns

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

V

=10V, V =15V, R =3.75

Ω,

Gate resistance

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Static Drain-Source On-Resistance

m

Ω

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

STATIC PARAMETERS

Parameter

Conditions

µA

Drain-Source Breakdown Voltage

On state drain current

Reverse Transfer Capacitance

SWITCHING PARAMETERS

1.5

ns

18.5

ns

15.5

ns

7.5

ns

2.5

nC

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Power dissipation P

on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.

B. The power dissipation P

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

G. The maximum current rating is limited by bond-wires.

curve provides a single pulse rating.

Rev 1: Dec 2011

www.aosmd.com

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