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AON7516 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON7516
Description  30V N-Channel AlphaMOS
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON7516 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON7516
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
ID (at VGS=10V)
30A
RDS(ON) (at VGS=10V)
< 4.5m
RDS(ON) (at VGS = 4.5V)
< 6.8m
Application
100% UIS Tested
100% Rg Tested
Symbol
VDS
Drain-Source Voltage
30
30V
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
G
D
S
Top View
1
2
3
4
8
7
6
5
DFN 3x3 EP
Top View
Bottom View
Pin 1
VDS
VGS
IDM
IAS
EAS
VDS Spike
VSPIKE
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
40
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
Maximum Junction-to-Ambient
A
°C/W
RθJA
30
Units
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
mJ
Avalanche Current
C
16
Continuous Drain
Current
29
20
A
TA=25°C
IDSM
A
TA=70°C
ID
30
Typ
Max
V
TC=25°C
TC=100°C
80
Pulsed Drain Current
C
Continuous Drain
Current
G
Power Dissipation
B
PD
Power Dissipation
A
PDSM
W
TA=70°C
2
TA=25°C
3.1
W
25
TC=25°C
10
TC=100°C
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
4.2
75
5
60
23
100ns
36
V
A
34
Avalanche energy L=0.05mH
C
Rev0: Oct 2011
www.aosmd.com
Page 1 of 6


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