PSMN2R1-40PL datasheet(1/13 Pages) NXP

Part #	PSMN2R1-40PL

Description	N-channel 40 V, 2.2 m廓 logic level MOSFET in SOT78

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Manufacturer	NXP [NXP Semiconductors]

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PSMN2R1-40PL

N-channel 40 V, 2.2 mΩ logic level MOSFET in SOT78

1 February 2013

Product data sheet

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1. General description

Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design

and manufacture has been optimized for use in battery operated power tools.

2. Features and benefits

• High efficiency due to low switching & conduction losses

• Robust construction for demanding applications

• Logic level gate

3. Applications

• Battery-powered tools

• Load switching

• Motor control

• Uninterruptible power supplies

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

40

V

ID

drain current

VGS = 10 V; Tmb = 25 °C; Fig. 1

[1]

-

150

A

Ptot

total power dissipation Tmb = 25 °C; Fig. 2

-

293

W

Static characteristics

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 11

-

1.8

2.2

mΩ

Dynamic characteristics

QG(tot)

total gate charge

-

168.9 -

nC

QGD

gate-drain charge

VGS = 10 V; ID = 25 A; VDS = 32 V;

Fig. 13; Fig. 14

-

29.6

-

nC

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche

energy

ID = 150 A; Vsup ≤ 40 V; RGS = 50 Ω;

VGS = 10 V; Tj(init) = 25 °C; unclamped;

Fig. 3

-

490.3 mJ

[1] Continuous current is limited by package.

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PSMN2R1-40PL Datasheet(PDF) 1 Page - NXP Semiconductors

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