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AON6932A Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON6932A Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 10 page  AON6932A Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.2 V 4.1 5 TJ=125°C 5.6 6.8 6.7 8.5 m Ω gFS 91 S VSD 0.7 1 V IS 28 A Ciss 1037 pF Coss 441 pF Crss 61 pF Rg 0.7 1.5 2.3 Ω Qg(10V) 15.5 22 nC Qg(4.5V) 6.8 10 nC Qgs 3.0 nC Qgd 3.6 nC tD(on) 5.5 ns tr 3.3 ns t 18 ns VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS µA VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance m Ω VGS=0V, VDS=0V, f=1MHz Forward Transconductance IS=1A,VGS=0V VDS=5V, ID=20A VGS=4.5V, ID=20A VDS=VGS ID=250µA Reverse Transfer Capacitance VGS=10V, ID=20A Diode Forward Voltage Total Gate Charge VGS=10V, VDS=15V, ID=20A Gate Source Charge Gate Drain Charge Total Gate Charge VGS=10V, VDS=15V, RL=0.75Ω, R =3 Ω Gate resistance Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime tD(off) 18 ns tf 4.3 ns trr 12.7 ns Qrr 17.2 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Time Turn-Off Fall Time RGEN=3Ω Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Turn-Off DelayTime A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 ° C. Rev 0 : Nov. 2012 www.aosmd.com Page 2 of 10 |
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