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AON6926 Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors |
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AON6926 Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors |
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6 / 10 page  AON6926 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 0.5 TJ=125°C 100 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.2 1.9 2.4 V ID(ON) 140 A 6.9 8.5 TJ=125°C 9.8 12 9.3 12 m Ω gFS 50 S VSD 0.5 0.7 V IS 40 A Ciss 900 1130 1360 pF Coss 320 465 605 pF Crss 12 40 70 pF Rg 0.35 0.7 1.1 Ω Qg(10V) 12 16 20 nC Qg(4.5V) 6 8 10 nC Qgs 3nC Qgd 3nC tD(on) 6ns tr 4ns tD(off) 19 ns tf 3ns trr 912 15 ns Qrr 18 23 28 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Gate Source Charge Gate Drain Charge Total Gate Charge Total Gate Charge VGS=10V, VDS=15V, ID=20A m Ω IS=1A,VGS=0V VDS=5V, ID=20A VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance IDSS mA VDS=VGS ID=250µA VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=500A/µs VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev0 : July 2010 www.aosmd.com Page 3 of 10 |
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Similar Description - AON6926 |
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