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AON6758 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON6758 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AON6758 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 0.5 TJ=125°C 100 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.4 1.8 2.4 V 3 3.6 TJ=125°C 3.9 4.7 3.9 5 m Ω gFS 85 S VSD 0.48 0.6 V IS 32 A Ciss 1975 pF Coss 913 pF Crss 92 pF Rg 0.7 1.5 2.3 Ω Qg(10V) 29.0 40 nC Qg(4.5V) 13.6 19 nC Qgs 5.8 nC Qgd 5.3 nC tD(on) 7.9 ns tr 4.0 ns t 27.3 ns RDS(ON) Static Drain-Source On-Resistance Diode Forward Voltage VDS=5V, ID=20A VGS=10V, ID=20A Reverse Transfer Capacitance VGS=0V, VDS=15V, f=1MHz Output Capacitance Forward Transconductance VDS=VGS, ID=250µA VDS=0V, VGS= ±20V Maximum Body-Diode Continuous Current G Input Capacitance Gate-Body leakage current DYNAMIC PARAMETERS VGS=4.5V, ID=20A m Ω IS=1A,VGS=0V SWITCHING PARAMETERS Turn-On DelayTime VGS=10V, VDS=15V, RL=0.75Ω, R =3 Ω VGS=10V, VDS=15V, ID=20A Turn-On Rise Time Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS mA Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage ID=10mA, VGS=0V Turn-Off DelayTime Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge Gate Source Charge Gate Drain Charge Total Gate Charge tD(off) 27.3 ns tf 6.5 ns trr 19 ns Qrr 36.7 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs RGEN=3Ω IF=20A, dI/dt=500A/µs Turn-Off DelayTime Turn-Off Fall Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T J(MAX)=150°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev 1: April 2012 www.aosmd.com Page 2 of 6 |
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