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ADG719 Datasheet(PDF) 1 Page - Analog Devices |
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ADG719 Datasheet(HTML) 1 Page - Analog Devices |
1 / 8 page REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. a ADG719 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998 CMOS Low Voltage 4 SPDT Switch FUNCTIONAL BLOCK DIAGRAM IN ADG719 S2 S1 SWITCHES SHOWN FOR A LOGIC "1" INPUT D FEATURES +1.8 V to +5.5 V Single Supply 4 (Max) On Resistance 0.75 (Typ) On-Resistance Flatness –3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 Package, 8-Lead SOIC Package Fast Switching Times tON 20 ns tOFF 6 ns Typical Power Consumption (<0.01 W) TTL/CMOS Compatible APPLICATIONS Battery Powered Systems Communication Systems Sample Hold Systems Audio Signal Routing Video Switching Mechanical Reed Relay Replacement GENERAL DESCRIPTION The ADG719 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. The ADG719 can operate from a single supply range of +1.8 V to +5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices. Each switch of the ADG719 conducts equally well in both di- rections when on. The ADG719 exhibits break-before-make switching action. Because of the advanced submicron process, –3 dB bandwidths of greater than 200 MHz can be achieved. The ADG719 is available in a 6-lead SOT-23 package and an 8-lead µSOIC package. PRODUCT HIGHLIGHTS 1. +1.8 V to +5.5 V Single Supply Operation. The ADG719 offers high performance, including low on resistance and fast switching times and is fully specified and guaranteed with +3 V and +5 V supply rails. 2. Very Low RON (4 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V operation, RON is typically 40 Ω over the temperature range. 3. On-Resistance Flatness (RFLAT(ON)) (0.75 Ω typ). 4. –3 dB Bandwidth >200 MHz. 5. Low Power Dissipation. CMOS construction ensures low power dissipation. 6. Fast tON/tOFF. 7. Tiny 6-lead SOT-23 and 8-lead µSOIC packages. |
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