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M12L128168A-5TG2L Datasheet(PDF) 8 Page - Elite Semiconductor Memory Technology Inc. |
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M12L128168A-5TG2L Datasheet(HTML) 8 Page - Elite Semiconductor Memory Technology Inc. |
8 / 45 page ESMT M12L128168A (2L) Elite Semiconductor Memory Technology Inc. Publication Date: Jun. 2012 Revision: 1.3 8/45 MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with MRS Address BA0~BA1 A11~A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Function RFU RFU W.B.L. TM CAS Latency BT Burst Length Test Mode CAS Latency Burst Type Burst Length A8 A7 Type A6 A5 A4 Latency A3 Type A2 A1 A0 BT = 0 BT = 1 0 0 Mode Register Set 0 0 0 Reserved 0 Sequential 0 0 0 1 1 0 1 Reserved 0 0 1 Reserved 1 Interleave 0 0 1 2 2 1 0 Reserved 0 1 0 2 0 1 0 4 4 1 1 Reserved 0 1 1 3 0 1 1 8 8 Write Burst Length 1 0 0 Reserved 1 0 0 Reserved Reserved A9 Length 1 0 1 Reserved 1 0 1 Reserved Reserved 0 Burst 1 1 0 Reserved 1 1 0 Reserved Reserved 1 Single Bit 1 1 1 Reserved 1 1 1 Full Page Reserved Full Page Length: 512 Note: 1. RFU (Reserved for future use) should stay “0” during MRS cycle. 2. If A9 is high during MRS cycle, “Burst Read single write” function will be enabled. |
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