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M12L64322A-5TG2U Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc.

Part # M12L64322A-5TG2U
Description  512K x 32 Bit x 4 Banks
Download  46 Pages
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M12L64322A-5TG2U Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M12L64322A (2U)
Elite Semiconductor Memory Technology Inc.
Publication Date: Apr. 2010
Revision: 1.0
4/46
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
C
°
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Note:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 C
°)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
Input logic high voltage
VIH
2.0
3.0
VDD+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
IIL
-5
-
5
μ A
3
Output leakage current
IOL
-5
-
5
μ A
4
Note:
1. VIH(max) = 4.6V AC for pulse width
10ns acceptable.
2. VIL(min) = -1.5V AC for pulse width
10ns acceptable.
3. Any input 0V
V
IN
VDD, all other pins are not under test = 0V.
4. Dout is disabled, 0V
VOUT VDD.
CAPACITANCE (VDD = 3.3V, TA = 25 C
° , f = 1MHz)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A10, BA0 ~ BA1)
CIN1
2
4
pF
Input capacitance
(CLK, CKE, CS , RAS , CAS , WE & DQM)
CIN2
2
4
pF
Data input/output capacitance (DQ0 ~ DQ31)
COUT
2
5
pF


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