Electronic Components Datasheet Search |
|
SBP13005-O Datasheet(PDF) 1 Page - SemiWell Semiconductor |
|
SBP13005-O Datasheet(HTML) 1 Page - SemiWell Semiconductor |
1 / 4 page SBP13005-O Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved SemiWell Semiconductor Absolute Maximum Ratings (TJ = 25℃ unless otherwise specified) Symbol Parameter Condition Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 4.0 A ICP Collector pulse Current 8.0 A IB Base Current 2.0 A IBM Base Peak Current tP = 5ms 4.0 A PC Total Dissipation at TC = 25℃ 75 W TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperture - 40 ~ 150 ℃ Thermal Characteristics Symbol Parameter Ratings Unit RθJC Thermal Resistance Junction to Case 1.67 ℃/W RθJA Thermal Resistance Junction to Ambient 62.5 ℃/W High Voltage Fast Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ Minimum lot to lot hFE Variation ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Oct 2008. Rev. 0 1/4 |
Similar Part No. - SBP13005-O |
|
Similar Description - SBP13005-O |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |