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DCR780E10 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DCR780E10 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 9 page SEMICONDUCTOR DCR780E14 3/9 www.dynexsemi.com DYNAMIC CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units IRRM/IDRM Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 30 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open 1000 - V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 1000A Repetitive 50Hz - 200 A/µs Gate source 30V, 10 , Non-repetitive - 1000 A/µs tr < 0.5µs, Tj = 125°C VT On-state voltage IT = 1500A, Tcase = 125°C 1.75 V VT(TO) Threshold voltage Tcase = 125°C - 0.95 V rT On-state slope resistance Tcase = 125°C - 0.53 m tgd Delay time VD = 67% VDRM, gate source 30V, 10 - 3.0 µs tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 100V, dI/dt = 10A/µs, - 150 µs dVDR/dt = 20V/µs linear to 67% VDRM QS Stored charge IT = 1000A, tp = 1000us,Tj = 125°C, dI/dt =10A/µs, - 1000 µC IRR Reverse recovery current - 95 A IL Latching current Tj = 25°C, - 1 A IH Holding current Tj = 25°C, - 200 mA GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 3 V VGD Gate non-trigger voltage At 40% VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 300 mA IGD Gate non-trigger current At 40% VDRM, Tcase = 125°C TBD mA |
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