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AOD607 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD607 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 9 page  Symbol Max p-channel Units VDS V VGS V IDM IAR A EAR mJ TJ, TSTG °C Thermal Characteristics: n-channel and p-channel Symbol Device Typ Max n-ch 19 23 °C/W n-ch 47 60 °C/W RθJC n-ch 4.5 6 °C/W p-ch 19 23 °C/W p-ch 47 60 °C/W RθJC p-ch 4.5 6 °C/W -40 -18 A W -9.4 -12 40 1.3 18 -55 to 175 -55 to 175 Power Dissipation A TA=25°C PDSM TA=70°C 2.1 2.1 1.3 Maximum Junction-to-Case B Steady-State Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State 40 TC=100°C Power Dissipation B TC=25°C PD Steady-State Junction and Storage Temperature Range Continuous Drain Current G TC=25°C ID TC=100°C Repetitive avalanche energy L=0.1mH C W 12.5 25 12.5 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel -30 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Parameter Maximum Junction-to-Ambient A t ≤ 10s 30 12 9.4 40 25 Avalanche Current C Pulsed Drain Current C RθJA Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State AOD607 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 30V -30V ID = 12A (VGS=10V) -12A (VGS = -10V) RDS(ON) RDS(ON) < 25 m Ω (VGS=10V) < 37 m Ω (VGS = -10V) < 34 m Ω (VGS=4.5V) < 62 m Ω (VGS = -4.5V) 100% UIS Tested! General Description The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free* G1 S1 G2 S2 n-channel p-channel D1/D2 Top View Drain Connected to Tab TO-252-4L D-PAK Top View Bottom View S1 S2 G1 G2 D1/D2 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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