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AOY516 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOY516 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 1.6 2 2.4 V 4 5 TJ=125°C 5.4 6.8 7.1 9 m Ω gFS 83 S VSD 0.7 1 V IS 46 A Ciss 1333 pF Coss 512 pF Crss 42 pF Rg 0.8 1.7 2.6 Ω Qg(10V) 18.3 33 nC Qg(4.5V) 8.5 17 nC Qgs 4.8 nC Qgd 2.5 nC tD(on) 7.5 ns tr 4.8 ns tD(off) 23.3 ns tf 4.5 ns trr 14.1 ns Qrr 16.2 nC VDS=VGS，ID=250µA Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current µA Gate-Body leakage current VDS=0V, VGS= ±20V DYNAMIC PARAMETERS RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A m Ω VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G Input Capacitance VGS=0V, VDS=15V, f=1MHz Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=10V, VDS=15V, ID=20A Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Turn-On DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. A. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 3: Nov 2012 www.aosmd.com Page 2 of 6 |
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