AOD478 datasheet(2/6 Pages) AOSMD

Part #	AOD478

Description	100V N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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2 / 6 page

AOD478/AOI478

Symbol

Min

Typ

Max

Units

BVDSS

100

V

VDS=100V, VGS=0V

1

TJ=55°C

5

IGSS

100

nA

VGS(th)

Gate Threshold Voltage

1.7

2.2

2.8

V

ID(ON)

24

A

116

140

TJ=125°C

225

270

121

152

m

Ω

gFS

17

S

VSD

0.76

1

V

IS

12

A

Ciss

350

445

540

pF

Coss

18

29

35

pF

Crss

9

16

23

pF

Rg

1

2

3

Ω

Qg(10V)

8

10.3

13

nC

Qg(4.5V)

4

5.1

6.5

nC

Qgs

1.6

nC

Qgd

2.4

nC

tD(on)

8

ns

t

3

ns

Turn-On Rise Time

IS=1A,VGS=0V

SWITCHING PARAMETERS

Maximum Body-Diode Continuous Current

G

Input Capacitance

RDS(ON)

Static Drain-Source On-Resistance

Diode Forward Voltage

V

=10V, V =50V, R =8.6

Ω,

Reverse Transfer Capacitance

VGS=0V, VDS=50V, f=1MHz

VGS=10V, VDS=50V, ID=4.5A

Gate Source Charge

Gate Drain Charge

Total Gate Charge

VGS=10V, VDS=5V

On state drain current

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VDS=5V, ID=4.5A

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

µA

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

VDS=VGS ID=250µA

VDS=0V, VGS= ±20V

m

Ω

VGS=10V, ID=4.5A

VGS=4.5V, ID=3A

tr

3

ns

tD(off)

17

ns

tf

4.5

ns

trr

14.5

21

27.5

ns

Qrr

68

97

126

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-On Rise Time

Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs

Turn-Off DelayTime

Body Diode Reverse Recovery Time

IF=4.5A, dI/dt=500A/µs

VGS=10V, VDS=50V, RL=8.6Ω,

RGEN=3Ω

Turn-Off Fall Time

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=175°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

Rev 1: Nov. 2011

www.aosmd.com

Page 2 of 6

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