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AOD468 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOD468
Description  300V,11.5A N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD468 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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background image
AOD468/AOI468
Symbol
Min
Typ
Max
Units
300
350
BVDSS
/∆TJ
0.29
V/
oC
1
10
IGSS
Gate-Body leakage current
±100
n
Α
VGS(th)
Gate Threshold Voltage
3.4
4
4.5
V
RDS(ON)
0.31
0.42
gFS
11
S
VSD
0.74
1
V
IS
Maximum Body-Diode Continuous Current
12
A
ISM
29
A
Ciss
500
632
790
pF
Coss
55
90
125
pF
Crss
3
7
11
pF
Rg
1.3
2.7
4.1
Qg
10
12.8
16
nC
Qgs
4.4
nC
Qgd
4.3
nC
tD(on)
18
ns
tr
31
ns
tD(off)
36
ns
tf
20
ns
trr
130
170
205
ns
Qrr
1
1.3
1.6
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Drain-Source Breakdown Voltage
Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Turn-On Rise Time
Forward Transconductance
VGS=10V, VDS=150V, ID=12A,
RG=25Ω
Gate resistance
Diode Forward Voltage
Reverse Transfer Capacitance
IF=12A,dI/dt=100A/µs,VDS=100V
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
BVDSS
µA
V
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=300V, VGS=0V
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
VDS=5V ID=250µA
VDS=240V, TJ=125°C
IS=1A,VGS=0V
VDS=40V, ID=6A
VDS=0V, VGS=±30V
VGS=10V, ID=6A
Total Gate Charge
VGS=10V, VDS=240V, ID=12A
Gate Source Charge
Gate Drain Charge
Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G.These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
H. L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev0: Dec 2010
www.aosmd.com
Page 2 of 6


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