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AOD468 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOD468 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOD468/AOI468 Symbol Min Typ Max Units 300 350 BVDSS /∆TJ 0.29 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.4 4 4.5 V RDS(ON) 0.31 0.42 Ω gFS 11 S VSD 0.74 1 V IS Maximum Body-Diode Continuous Current 12 A ISM 29 A Ciss 500 632 790 pF Coss 55 90 125 pF Crss 3 7 11 pF Rg 1.3 2.7 4.1 Ω Qg 10 12.8 16 nC Qgs 4.4 nC Qgd 4.3 nC tD(on) 18 ns tr 31 ns tD(off) 36 ns tf 20 ns trr 130 170 205 ns Qrr 1 1.3 1.6 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Drain-Source Breakdown Voltage Body Diode Reverse Recovery Time Static Drain-Source On-Resistance DYNAMIC PARAMETERS Turn-On Rise Time Forward Transconductance VGS=10V, VDS=150V, ID=12A, RG=25Ω Gate resistance Diode Forward Voltage Reverse Transfer Capacitance IF=12A,dI/dt=100A/µs,VDS=100V VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions BVDSS µA V Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=300V, VGS=0V ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C VDS=5V ID=250µA VDS=240V, TJ=125°C IS=1A,VGS=0V VDS=40V, ID=6A VDS=0V, VGS=±30V VGS=10V, ID=6A Total Gate Charge VGS=10V, VDS=240V, ID=12A Gate Source Charge Gate Drain Charge Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C Rev0: Dec 2010 www.aosmd.com Page 2 of 6 |
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