AOD464_10 datasheet(2/6 Pages) AOSMD

Part #	AOD464

Description	N-Channel Enhancement Mode Field Effect Transistor

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

Logo

2 / 6 page

AOD464

Symbol

Min

Typ

Max

Units

BVDSS

105

V

1

TJ=55°C

5

IGSS

100

nA

VGS(th)

2.5

3.2

4

V

ID(ON)

80

A

21.5

28

TJ=125°C

32

40

24

31

m

Ω

gFS

50

S

VSD

0.73

1

V

IS

55

A

Ciss

2038

2445

pF

Coss

204

pF

Crss

85

pF

Rg

1.3

1.56

Ω

Qg(10V)

38.5

46

nC

Qgs

8nC

Qgd

10

nC

tD(on)

12.7

ns

tr

8.2

ns

tD(off)

31.5

ns

tf

11.2

ns

trr

59.6

74

ns

Qrr

161

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005

Body Diode Reverse Recovery Time

IF=20A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs

Turn-On DelayTime

VGS=10V, VDS=50V, RL=2.7Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Gate resistance

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

VGS=10V, VDS=50V, ID=20A

Gate Source Charge

Gate Drain Charge

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

Forward Transconductance

VDS=5V, ID=20A

Diode Forward Voltage

IS=1A, VGS=0V

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=20A

m

Ω

VGS=6V, ID=20A

Gate Threshold Voltage

VDS=VGS, ID=250µA

On state drain current

VGS=10V, VDS=5V

µA

Gate-Body leakage current

VDS=0V, VGS=±25V

Drain-Source Breakdown Voltage

ID=10mA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=84V, VGS=0V

Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C.

G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

curve provides a single pulse rating.

*This device is guaranteed green after data code 8X11 (Sep 1

ST 2008).

Rev1: Sep. 2008

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

Similar Part No. - AOD464_10

Manufacturer	Part #	Datasheet	Description
Alpha & Omega Semicondu...	AOD464L	129Kb / 5P	N-Channel Enhancement Mode Field Effect Transistor

More results

Similar Description - AOD464_10

Manufacturer	Part #	Datasheet	Description
Diodes Incorporated	BS870	63Kb / 2P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS11302 Rev. G-2
	BSS123W	67Kb / 3P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS30368 Rev. 2 - 2
	DT453N	73Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DS11608 Rev. C-4
NXP Semiconductors	BSH121	297Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-14 August 2000
NXP Semiconductors	PH8230	214Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-23 June 2003
Unisonic Technologies	2N7002	148Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Chino-Excel Technology	CEP13N10	98Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP50N06	391Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP65A3	101Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP80N75	400Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
	CEP658N	491Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

More results

AOD464 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

AOD464 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

Similar Part No. - AOD464_10

Similar Description - AOD464_10

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL