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AOD7S60 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOD7S60 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 7 page AOD7S60/AOU7S60 Symbol Min Typ Max Units 600 - - 650 700 - - - 1 - 10 - IGSS Gate-Body leakage current - - ±100 n Α VGS(th) Gate Threshold Voltage 2.7 3.3 3.9 V - 0.54 0.6 Ω - 1.48 1.64 Ω VSD - 0.82 - V IS Maximum Body-Diode Continuous Current - - 7 A ISM - - 33 A Ciss - 372 - pF Coss - 28 - pF Co(er) - 22 - pF Co(tr) - 65 - pF Crss - 1.2 - pF Rg - 17.5 - Ω Qg - 8.2 - nC Qgs - 2.0 - nC Qgd - 2.8 - nC tD(on) - 19 - ns tr - 13 - ns tD(off) - 50 - ns tf - 15 - ns trr - 198 - ns Irm - 18 - A Qrr - 2.4 - µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Peak Reverse Recovery Current IF=3.5A,dI/dt=100A/µs,VDS=400V Gate Source Charge Gate Drain Charge IF=3.5A,dI/dt=100A/µs,VDS=400V Body Diode Reverse Recovery Time SWITCHING PARAMETERS Reverse Transfer Capacitance VGS=10V, ID=3.5A, TJ=150°C Effective output capacitance, energy related I VGS=0V, VDS=0 to 480V, f=1MHz Output Capacitance VGS=10V, ID=3.5A, TJ=25°C Diode Forward Voltage VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0V, f=1MHz Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V Maximum Body-Diode Pulsed Current C Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime Input Capacitance VGS=0V, VDS=100V, f=1MHz V BVDSS VGS=10V, VDS=400V, ID=3.5A, RG=25Ω Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=480V, ID=3.5A RDS(ON) Static Drain-Source On-Resistance IS=3.5A,VGS=0V, TJ=25°C Gate resistance ID=250µA, VGS=0V, TJ=25°C VDS=0V, VGS=±30V VDS=480V, TJ=150°C Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C IDSS Effective output capacitance, time related J Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions µA VDS=600V, VGS=0V VDS=5V,ID=250µA Drain-Source Breakdown Voltage A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. K. Wave soldering only allowed at leads. Rev0: Aug 2011 www.aosmd.com Page 2 of 7 |
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