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AOD6N50 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOD6N50 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOD6N50 Symbol Min Typ Max Units 500 600 BVDSS /∆TJ 0.6 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.4 4.1 4.5 V RDS(ON) 1.2 1.4 Ω gFS 5 S VSD 0.76 1 V IS Maximum Body-Diode Continuous Current 5 A ISM 17 A Ciss 430 538 670 pF Coss 40 58 80 pF Crss 2.5 4.5 7 pF Rg 1.2 2.3 3.5 Ω Qg 9 11.5 14 nC Qgs 3 3.8 4.6 nC Qgd 2 4.1 6.2 nC tD(on) 18 ns tr 32 ns tD(off) 34 ns VGS=10V, VDS=400V, ID=5A Turn-On DelayTime Gate Source Charge Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Diode Forward Voltage VDS=0V, VGS=±30V VDS=40V, ID=2.5A Forward Transconductance Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=250V, ID=5A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Zero Gate Voltage Drain Current ID=250µA, VGS=0V BVDSS µA V Static Drain-Source On-Resistance VGS=10V, ID=2.5A Reverse Transfer Capacitance VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V Gate Drain Charge VDS=5V ID=250µA VDS=400V, TJ=125°C IS=1A,VGS=0V tD(off) 34 ns tf 22 ns trr 145 182 220 ns Qrr 1.7 2.2 2.7 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V Turn-Off DelayTime RG=25Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, I AS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C Rev0: April 2012 www.aosmd.com Page 2 of 6 |
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