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AOT2910L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT2910L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 30A / 22A RDS(ON) (at VGS=10V) < 24m Ω (* 23.5mΩ) RDS(ON) (at VGS=4.5V) < 33m Ω (* 32.5mΩ) 100% UIS Tested 100% Rg Tested Symbol VDS VGS 100V AOT2910L/AOB2910L AOTF2910L Drain-Source Voltage 100 The AOT2910L & AOB2910L & AOTF2910L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted V ±20 Gate-Source Voltage G D S TO-263 D2PAK G D S G D S D S G Top View TO-220F TO-220 AOTF2910L AOT2910L AOB2910L IDM IAS EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 22 21 15.5 80 Maximum Junction-to-Case Pulsed Drain Current C Continuous Drain Current Power Dissipation A 15 TC=100°C Power Dissipation B PD 25 13.5 -55 to 175 °C/W °C/W Maximum Junction-to-Ambient A D 3 60 5.5 W TA=70°C 1.3 TA=25°C 2.1 PDSM A TA=25°C IDSM 50 27 6.0 30 15 Avalanche energy L=0.1mH C A TA=70°C Continuous Drain Current 11 ID W TC=25°C °C Thermal Characteristics Parameter AOT2910L/AOB2910L AOTF2910L Maximum Junction-to-Ambient A °C/W RθJA 15 60 TC=25°C TC=100°C mJ Avalanche Current C 4.5 A Units Junction and Storage Temperature Range Rev 0 : Oct. 2012 www.aosmd.com Page 1 of 7 |
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