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AOTF2618L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOTF2618L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 7 page  AOT2618L/AOB2618L/AOTF2618L Symbol Min Typ Max Units BVDSS 60 V VDS=60V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.4 1.95 2.5 V ID(ON) 70 A 15.8 19 TJ=125°C 29.3 35.5 19.5 25 m Ω gFS 45 S VSD 0.72 1 V IS 23 A Ciss 950 pF Coss 108 pF Crss 7 pF Rg 1 2 3 Ω Qg(10V) 14 20 nC Qg(4.5V) 6 10 nC Qgs 3 nC Qgd 1.6 nC tD(on) 7.5 ns t 31 ns V =10V, V =30V, R =1.5 Ω, Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A Turn-On DelayTime Total Gate Charge Gate Source Charge Gate Drain Charge SWITCHING PARAMETERS Total Gate Charge Forward Transconductance Turn-On Rise Time IS=1A,VGS=0V VDS=5V, ID=20A Diode Forward Voltage Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=30V, f=1MHz DYNAMIC PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS µA Zero Gate Voltage Drain Current m Ω On state drain current VGS=10V, VDS=5V VGS=10V, ID=20A Gate-Body leakage current VDS=VGS，ID=250µA VDS=0V, VGS=±20V RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A tr 31 ns tD(off) 18 ns tf 40 ns trr 20 ns Qrr 70 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs Turn-Off DelayTime VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω Turn-Off Fall Time Turn-On Rise Time A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev 0 : July 2012 www.aosmd.com Page 2 of 7 |
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