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C3225X7R2A225KT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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C3225X7R2A225KT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 20 page MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 1 RF Device Data Freescale Semiconductor RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices are ideally suited for use in analog or digital television transmitters. • Typical Narrowband Performance: VDD =50 Volts,IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 7.61 MHz Signal Bandwidth @ ±4 MHz Offset with an Integration Bandwidth of 4 kHz. Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) ACPR (dBc) IRL (dB) DVB--T (8k OFDM) 125 Avg. 860 19.3 30.0 --60.5 --12 • Typical Pulsed Broadband Performance: VDD =50 Volts,IDQ = 1400 mA, Pulsed Width = 100 μsec, Duty Cycle = 10% Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) Pulsed 600 Peak 470 19.3 47.1 650 20.0 53.1 860 18.8 48.9 Features • Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc, 860 MHz, DVB--T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input Overdrive from Rated Pout) • Exceptional Efficiency for Class AB Analog or Digital Television Operation • Full Performance across Complete UHF TV Spectrum, 470--860 MHz • Capable of 600 Watt CW Output Power with Adequate Thermal Management • Integrated Input Matching • Extended Negative Gate--Source Voltage Range of --6.0 V to +10 V − Improves Class C Performance, e.g. in a Doherty Peaking Stage − Enables Fast, Easy and Complete Shutdown of the Amplifier • Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation • Excellent Thermal Characteristics • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +130 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Total Device Dissipation @ TC =25°C Derate above 25°C PD 1052 5.26 W W/°C Operating Junction Temperature (1,2) TJ 225 °C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Document Number: MRFE6VP8600H Rev. 1, 9/2011 Freescale Semiconductor Technical Data 470--860 MHz, 600 W, 50 V LDMOS BROADBAND RF POWER TRANSISTORS MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 CASE 375D--05, STYLE 1 NI--1230 MRFE6VP8600HR6 CASE 375E--04, STYLE 1 NI--1230S MRFE6VP8600HSR6 PARTS ARE PUSH--PULL Figure 1. Pin Connections (Top View) Drain 1 31 42 Drain 2 Gate 1 Gate 2 Note: The backside of the package is the source terminal for the transistor. © Freescale Semiconductor, Inc., 2011. All rights reserved. |
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