CDR33BX104AKYS datasheet(5/19 Pages) FREESCALE

Part #	CDR33BX104AKYS

Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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MRF6V2300NR1 MRF6V2300NBR1

5

RF Device Data

Freescale Semiconductor

TYPICAL CHARACTERISTICS

50

1

1000

020

10

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 4. Capacitance versus Drain--Source Voltage

30

Ciss

1

100

1

TC =25°C

10

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 5. DC Safe Operating Area

40

0

10

0

DRAIN VOLTAGE (VOLTS)

9

8

7

6

20

120

Figure 6. DC Drain Current versus Drain Voltage

60

600

22

28

IDQ = 1350 mA

10

26

25

24

Pout, OUTPUT POWER (WATTS) CW

Figure 7. CW Power Gain versus Output Power

VDD =50 Vdc

f1 = 220 MHz

100

10

40

100

27

5

VGS =3 V

Coss

Crss

80

100

4

3

2

1

2.75 V

2.63 V

2.5 V

2.25 V

23

100

1125 mA

900 mA

650 mA

450 mA

100

--55

--15

1

Pout, OUTPUT POWER (WATTS) PEP

--25

--30

--35

--40

10

600

Figure 8. Third Order Intermodulation Distortion

versus Output Power

VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz

Two--Tone Measurements, 100 kHz Tone Spacing

--45

--50

--20

IDQ = 450 mA

1350 mA

900 mA

650 mA

1125 mA

34

50

60

24

28

26

58

56

54

52

Pin, INPUT POWER (dBm)

Figure 9. CW Output Power versus Input Power

30

32

P3dB = 55.76 dBm (377 W)

Actual

Ideal

P1dB = 55.04 dBm (319 W)

VDD =50 Vdc,IDQ = 900 mA

f = 220 MHz

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

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CDR33BX104AKYS Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

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