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ATC200B203KT50XT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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ATC200B203KT50XT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 18 page MRF6V2150NR1 MRF6V2150NBR1 1 RF Device Data Freescale Semiconductor RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD =50 Volts,IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.3% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS -- 0.5, +110 Vdc Gate--Source Voltage VGS -- 0.5, + 12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Document Number: MRF6V2150N Rev. 4, 4/2010 Freescale Semiconductor Technical Data MRF6V2150NR1 MRF6V2150NBR1 10--450 MHz, 150 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V2150NBR1 CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V2150NR1 PARTS ARE SINGLE--ENDED (Top View) RFout/VDS Figure 1. Pin Connections RFout/VDS RFin/VGS RFin/VGS Note: Exposed backside of the package is the source terminal for the transistor. © Freescale Semiconductor, Inc., 2007--2008, 2010. All rights reserved. |
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