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ATC100B2R2JT500XT Datasheet(PDF) 1 Page - Freescale Semiconductor, Inc |
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ATC100B2R2JT500XT Datasheet(HTML) 1 Page - Freescale Semiconductor, Inc |
1 / 20 page MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 1 RF Device Data Freescale Semiconductor, Inc. RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast applications. • Typical Performance (Broadband Reference Circuit): VDD =50 Volts, IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Signal Type Pout (W) f (MHz) Gps (dB) ηD (%) Output Signal PAR (dB) IMD Shoulder (dBc) DVB--T (8k OFDM) 18 Avg. 470 21.8 31.0 7.9 --27.8 650 21.6 26.4 8.4 --37.6 860 21.7 27.6 7.1 --30.4 Features • Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz, 90 Watts CW Output Power • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Input Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Excellent Thermal Stability • Device can be used Single--Ended or in a Push--Pull Configuration • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +115 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Table 2. Thermal Characteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 76°C, 18 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz Case Temperature 80°C, 90 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz RθJC 0.79 0.82 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. Document Number: MRF6VP3091N Rev. 1, 12/2011 Freescale Semiconductor Technical Data (Top View) 470--860 MHz, 90 W, 50 V BROADBAND RF POWER LDMOS TRANSISTORS PARTS ARE PUSH--PULL Drain 1 Figure 1. Pin Connections Drain 2 Gate 1 Gate 2 Note: Exposed backside of the package is the source terminal for the transistor. CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6VP3091NBR1(NBR5) CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6VP3091NR1(NR5) MRF6VP3091NR1 MRF6VP3091NR5 MRF6VP3091NBR1 MRF6VP3091NBR5 © Freescale Semiconductor, Inc., 2011. All rights reserved. |
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