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RC1206FR-108R2L Datasheet(PDF) 3 Page - Freescale Semiconductor, Inc |
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RC1206FR-108R2L Datasheet(HTML) 3 Page - Freescale Semiconductor, Inc |
3 / 15 page AFT21S230SR3 AFT21S232SR3 3 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA =25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1500 mA, f = 2140 MHz VSWR 10:1 at 32 Vdc, 269 W CW Output Power (3 dB Input Overdrive from 182 W CW Rated Power) No Device Degradation Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1500 mA, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 182 (1) — W AM/PM (Maximum value measured at the P3dB compression point across the 2110--2170 MHz bandwidth) — --19.3 — VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) AFT21S230S AFT21S232S VBWres — 95 60 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout =50 W Avg. GF — 0.5 — dB Gain Variation over Temperature (--30Cto+85C) G — 0.016 — dB/C Output Power Variation over Temperature (--30Cto+85C) (1) P1dB — 0.007 — dB/C 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. |
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