AFT20P060--4NR3

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 6.3 watt RF power LDMOS transistor is designed for cellular base

station applications covering the frequency range of 1805 to 2170 MHz.

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

2110 MHz

18.6

20.0

9.4

--43.0

--13

2140 MHz

18.8

20.0

9.2

--42.5

--14

2170 MHz

18.9

20.0

9.1

--42.5

--14

1800 MHz

Probability on CCDF.

Frequency

(dB)

(%)

Output PAR

(dB)

ACPR

(dBc)

IRL

(dB)

1805 MHz

18.8

23.0

9.5

--43.0

--10

1840 MHz

19.1

23.8

9.4

--42.9

--15

1880 MHz

18.7

24.5

9.1

--42.9

--10

Features

 Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

 Designed for Digital Predistortion Error Correction Systems

 Optimized for Doherty Applications

 In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

Document Number: AFT20P060--4N

Rev. 0, 1/2013

Freescale Semiconductor

Technical Data

1805–2170 MHz, 6.3 W AVG., 28 V

AFT20P060--4NR3

(Top View)

31

Figure 1. Pin Connections

Note: Exposed backside of the package is

the source terminal for the transistors.

OM--780--4

PLASTIC

 Freescale Semiconductor, Inc., 2013. All rights reserved.