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Motorola Bipolar Power Transistor Device Data

Designer's™ Data Sheet

SWITCHMODE™

NPN Bipolar Power Transistor

For Switching Power Supply Applications

The MJE/MJF18008 have an applications specific state–of–the–art die designed

for use in 220 V line–operated Switchmode Power supplies and electronic light

ballasts. These high voltage/high speed transistors offer the following:

• Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain hFE

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

• Tight Parametric Distributions are Consistent Lot–to–Lot

• Two Package Choices: Standard TO–220 or Isolated TO–220

• MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File #E69369

MAXIMUM RATINGS

Rating

Symbol

MJE18008

MJF18008

Unit

Collector–Emitter Sustaining Voltage

VCEO

450

Vdc

Collector–Emitter Breakdown Voltage

VCES

1000

Vdc

Emitter–Base Voltage

VEBO

9.0

Vdc

Collector Current — Continuous

— Peak(1)

IC

ICM

8.0

16

Adc

Base Current — Continuous

— Peak(1)

IB

IBM

4.0

8.0

Adc

RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22b

TC = 25_C)

Test No. 1 Per Fig. 22c

VISOL

—

—

—

4500

3500

1500

Volts

Total Device Dissipation

(TC = 25

°C)

Derate above 25

_C

PD

125

1.0

45

0.36

Watts

W/

_C

Operating and Storage Temperature

TJ, Tstg

– 65 to 150

_C

THERMAL CHARACTERISTICS

Rating

Symbol

MJE18008

MJF18008

Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

1.0

62.5

2.78

62.5

_C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8

″ from Case for 5 Seconds

TL

260

_C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

VCEO(sus)

450

—

—

Vdc

Collector Cutoff Current (VCE = Rated VCEO, IB = 0)

ICEO

—

—

100

µAdc

Collector Cutoff Current (VCE = Rated VCES, VEB = 0)

(TC = 125_C)

(TC = 125_C)

ICES

—

—

—

—

—

—

100

500

100

µAdc

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

IEBO

—

—

100

µAdc

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

v 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE18008/D

MJE18008

MJF18008

POWER TRANSISTOR

8.0 AMPERES

1000 VOLTS

45 and 125 WATTS

*Motorola Preferred Device

*

*

CASE 221A–06

TO–220AB

MJE18008

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

MJF18008

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