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AOB266L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOB266L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 140A/78A RDS(ON) (at VGS=10V) < 3.5m Ω (< 3.2mΩ∗) RDS(ON) (at VGS=6V) < 4.0m Ω (< 3.8mΩ∗) 100% UIS Tested 100% Rg Tested Symbol VDS VGS 60V AOT266L/AOB266L AOTF266L Drain-Source Voltage 60 The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted V ±20 Gate-Source Voltage G D S TO-263 D2PAK G D S G D S D S G Top View TO-220F TO-220 AOTF266L AOT266L AOB266L IDM IAS EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC * Surface mount package TO263 78 110 55 450 Maximum Junction-to-Case Pulsed Drain Current C Continuous Drain Current G Power Dissipation A 15 TC=100°C Power Dissipation B PD 134 22.5 -55 to 175 °C/W °C/W Maximum Junction-to-Ambient A D 0.56 60 3.3 W TA=70°C 1.3 TA=25°C 2.1 PDSM A TA=25°C IDSM 268 45.5 18 140 90 Avalanche energy L=0.1mH C A TA=70°C Continuous Drain Current 405 ID W TC=25°C °C Thermal Characteristics Parameter AOT266L/AOB266L AOTF266L Maximum Junction-to-Ambient A °C/W RθJA 15 60 TC=25°C TC=100°C mJ Avalanche Current C 14 A Units Junction and Storage Temperature Range Rev 2 : May 2012 www.aosmd.com Page 1 of 7 |
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