Electronic Components Datasheet Search |
|
AOTF10N60 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
|
AOTF10N60 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOT10N60/AOB10N60/AOTF10N60 Symbol Min Typ Max Units 600 700 BVDSS /∆TJ 0.65 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3 4 4.5 V RDS(ON) 0.6 0.75 Ω gFS 15 S VSD 0.73 1 V IS Maximum Body-Diode Continuous Current 10 A ISM 36 A Ciss 1100 1320 1600 pF Coss 105 130 160 pF Crss 7.5 9.3 11 pF Rg 3 3.8 6 Ω Qg 31 40 nC Qgs 6 10 nC Qgd 14.4 20 nC tD(on) 28 35 ns tr 66 80 ns tD(off) 76 95 ns tf 64 80 ns trr 290 350 ns Qrr 3.9 4.7 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Static Drain-Source On-Resistance VGS=10V, ID=5A Reverse Transfer Capacitance IF=10A,dI/dt=100A/µs,VDS=100V VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS IS=1A,VGS=0V VDS=40V, ID=5A Forward Transconductance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions VDS=5V ID=250µA VDS=480V, TJ=125°C Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V ID=250µA, VGS=0V Diode Forward Voltage Turn-Off DelayTime VGS=10V, VDS=300V, ID=10A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=480V, ID=10A Gate Source Charge Gate Drain Charge BVDSS Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time µA VDS=0V, VGS=±30V V Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=4.4A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev7: Jul 2011 www.aosmd.com Page 2 of 6 |
Similar Part No. - AOTF10N60 |
|
Similar Description - AOTF10N60 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |