AO8830 datasheet(2/5 Pages) AOSMD

Part #	AO8830

Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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2 / 5 page

AO8830

Symbol

Min

Typ

Max

Units

BVDSS

20

V

1

TJ=55°C

5

IGSS

10

BVGSO

±12

V

VGS(th)

0.5

0.6

1

V

ID(ON)

30

A

16

22

27

TJ=125°C

31

19

25

30

mΩ

22

30

37

25

32

41

mΩ

32

42

55

mΩ

gFS

21

S

VSD

0.75

1

V

IS

2.5

A

Ciss

290

pF

Coss

120

pF

Crss

40

pF

Rg

1.6

kΩ

Qg

5.2

nC

Qgs

2.1

nC

Qgd

1.9

nC

tD(on)

280

ns

tr

972

ns

tD(off)

2.35

µ

s

tf

2.2

µ

s

trr

25

ns

Qrr

8

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Gate-Source Breakdown Voltage

VDS=0V, IG=±250uA

Gate Threshold Voltage

VDS=VGS ID=1mA

Diode Forward Voltage

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=10V, f=1MHz

Gate Drain Charge

Turn-On Rise Time

Turn-Off DelayTime

VGS=4.5V, VDS=10V, RL=1.7Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge

VGS=4.5V, VDS=10V, ID=6A

Gate Source Charge

mΩ

VGS=2.5V, ID=4A

IS=1A,VGS=0V

VDS=5V, ID=6A

VGS=1.8V, ID=2A

VGS=4.5V, ID=5A

VGS=3.1V, ID=4A

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

µ

A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

VDS=16V, VGS=0V

Zero Gate Voltage Drain Current

VDS=0V, VGS=±10V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs, VGS=-9V

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VGS=10V, ID=6A

Reverse Transfer Capacitance

IF=6A, dI/dt=100A/µs, VGS=-9V

A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

value in any given application depends on the user's specific board design. The currentand power rating is based on the t≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

Rev 5: July 2010

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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