MJE18004 MJF18004

6

Motorola Bipolar Power Transistor Device Data

0.1

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Safe

Operating Area

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC–VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate. The data of Figure 15 is based

on TC = 25°C; TJ(pk) is variable depending on power level.

Second breakdown pulse limits are valid for duty cycles to

1 0 % b u t m u s t b e d e r a t e d w h e n T C ≥ 25°C. Second

breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on Figure

15 may be found at any case temperature by using the

appropriate curve on Figure 17. TJ(pk) may be calculated

from the data in Figures 20 and 21. At any case tempera-

tures, thermal limitations will reduce the power that can be

handled to values less the limitations imposed by second

breakdown. For inductive loads, high voltage and current

must be sustained simultaneously during turn–off with the

base–to–emitter junction reverse biased. The safe level is

specified as a reverse–biased safe operating area (Figure

16). This rating is verified under clamped conditions so that

the device is never subjected to an avalanche mode.

hFE, FORCED GAIN

hFE, FORCED GAIN

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

TC, CASE TEMPERATURE (°C)

GUARANTEED SAFE OPERATING AREA INFORMATION

3

6

12

15

9

70

4

5

7

8

10

11

13

14

3

6

12

15

50

4

5

13

14

10

1000

100

0.01

400

600

1100

900

0

500

800

700

1000

80

90

100

110

120

130

140

150

160

200

300

150

100

250

1.0

10

100

1.0

2.0

3.0

4.0

5.0

6.0

9

7

8

10

11

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

1.0

0.8

0.6

0.4

0.2

0

160

140

120

100

80

60

40

20

IC = 2 A

IC = 1 A

TJ = 25°C

TJ = 125°C

VZ = 300 V

VCC = 15 V

IB(off) = IC/2

LC = 200 µH

VZ = 300 V

VCC = 15 V

IB(off) = IC/2

LC = 200 µH

IC = 1 A

IC = 2 A

TJ = 25°C

TJ = 125°C

1

µs

10

µs

50

µs

1 ms

5 ms

DC (MJE18004)

DC (MJF18004)

Extended

SOA

TC ≤ 125°C

IC/IB ≥ 4

LC = 500 µH

VBE(off) =

0 V

–1.5 V

– 5 V

SECOND

BREAKDOWN

DERATING

THERMAL

DERATING