IDW16G65C5_12 datasheet(7/11 Pages) INFINEON

Part #	IDW16G65C5

Description	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

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Manufacturer	INFINEON [Infineon Technologies AG]

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5

th Generation thinQ!TM SiC Schottky Diode

IDW16G65C5

Electrical characteristics diagrams

Final Data Sheet

7

Rev. 2.2, 2013-01-15

Table 9

Typ. capacitance charge vs. current slope

1)

Typ. reverse current vs. reverse voltage

0

5

10

15

20

25

100

300

500

700

900

dI

F/dt [A/µs]

1.E-9

1.E-8

1.E-7

1.E-6

1.E-5

100

200

300

400

500

600

V

R [V]

QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max

IR=f(VR); parameter: Tj;

1) Only capacitive charge, guaranteed by design.

Table 10

Max. transient thermal impedance

Typ. capacitance vs. reverse voltage

0.01

0.1

1

1.E-06

1.E-03

1.E+00

t

p [s]

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

0

100

200

300

400

500

600

0

1

10

100

1000

VR [V]

Zth,jc=f(tP); parameter: D=tP/T;

C=f(VR); Tj=25°C; f=1 MHz

-55°C

175°C

150°C

25°C

100°C

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