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MJF18002 Datasheet(PDF) 2 Page - Motorola, Inc

Part # MJF18002
Description  POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJF18002 Datasheet(HTML) 2 Page - Motorola, Inc

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MJE18002 MJF18002
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VBE(sat)
0.825
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 125°C
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125°C
VCE(sat)
0.2
0.2
0.25
0.3
0.5
0.5
0.5
0.6
Vdc
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 125°C
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
11
11
6.0
5.0
10
27
17
20
8.0
8.0
20
34
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
13
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
35
60
pF
Input Capacitance (VEB = 8.0 V)
Cib
400
600
pF
Dynamic Saturation:
determined 1.0
µs and
3.0
µs after rising IB1
reach 0.9 final IB1
(see Figure 18)
IC = 0.4 A
IB1 = 40 mA
VCC = 300 V
1.0
µs
@ TC = 125°C
VCE(dsat)
3.5
8.0
Vdc
determined 1.0
µs and
3.0
µs after rising IB1
reach 0.9 final IB1
(see Figure 18)
IB1 = 40 mA
VCC = 300 V
3.0
µs
@ TC = 125°C
1.5
3.8
reach 0.9 final IB1
(see Figure 18)
IC = 1.0 A
IB1 = 0.2 A
VCC = 300 V
1.0
µs
@ TC = 125°C
8.0
14
IB1 = 0.2 A
VCC = 300 V
3.0
µs
@ TC = 125°C
2.0
7.0
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 20 µs)
Turn–On Time
IC = 0.4 Adc
IB1 = 40 mAdc
IB2 = 0.2 Adc
VCC = 300 V
@ TC = 125°C
ton
200
130
300
ns
Turn–Off Time
IB2 = 0.2 Adc
VCC = 300 V
@ TC = 125°C
toff
1.2
1.5
2.5
µs
Turn–On Time
IC = 1.0 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
VCC = 300 V
@ TC = 125°C
ton
85
95
150
ns
Turn–Off Time
IB2 = 0.5 Adc
VCC = 300 V
@ TC = 125°C
toff
1.7
2.1
2.5
µs
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
IC = 0.4 Adc, IB1 = 40 mAdc,
IB2 = 0.2 Adc
@ TC = 125°C
tfi
125
120
200
ns
Storage Time
@ TC = 125°C
tsi
0.7
0.8
1.25
µs
Crossover Time
@ TC = 125°C
tc
110
110
200
ns
Fall Time
IC = 1.0 Adc, IB1 = 0.2 Adc,
IB2 = 0.5 Adc
@ TC = 125°C
tfi
110
120
175
ns
Storage Time
@ TC = 125°C
tsi
1.7
2.25
2.75
µs
Crossover Time
@ TC = 125°C
tc
200
250
300
ns
Fall Time
IC = 0.4 Adc, IB1 = 50 mAdc,
IB2 = 50 mAdc
@ TC = 125°C
tfi
140
185
200
ns
Storage Time
@ TC = 125°C
tsi
2.2
2.5
3.0
µs
Crossover Time
@ TC = 125°C
tc
140
220
250
ns


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