IDH06G65C5_12 datasheet(4/11 Pages) INFINEON

Part #	IDH06G65C5

Description	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

4 / 11 page

5th Generation thinQ!

TM SiC Schottky Diode

IDH06G65C5

Maximum ratings

Final Data Sheet

4

Rev. 2.2, 2012-12-10

2

Maximum ratings

Table 3

Maximum ratings

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Continuous forward current

IF

–

6

A

TC < 145°C, D=1

Surge non-repetitive forward current,

sine halfwave

IF,SM

–

54

TC = 25°C, tp=10 ms

–

48

TC = 150°C, tp=10 ms

Non-repetitive peak forward current IF,max

–

291

TC = 25°C, tp=10 µs

i²t value

∫ i²dt

–

14

A²s

TC = 25°C, tp=10 ms

–

11

TC = 150°C, tp=10 ms

Repetitive peak reverse voltage

VRRM

–

650

V

Tj = 25°C

Diode dv/dt ruggedness

dv/dt

–

100

V/ns

VR=0..480 V

Power dissipation

Ptot

–

62

W

TC = 25°C

Operating and storage temperature Tj;Tstg

-55

–

175

°C

Mounting torque

–

70

Ncm

M3 screws

3

Thermal characteristics

Table 4

Thermal characteristics TO-220-2

Parameter

Symbol

Values

Unit

Note/Test Condition

Min.

Typ.

Max.

Thermal resistance, junction-case

RthJC

–

1.5

2.4

K/W

Thermal resistance, junction-

ambient

RthJA

–

62

leaded

Soldering temperature,

wavesoldering only allowed at leads

Tsold

–

260

°C

1.6mm (0.063 in.) from

case for 10 s

Similar Part No. - IDH06G65C5_12

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IDH06G65C5	417Kb / 2P	650V SiC thinQ!??Generation 5 diodes 09 / 2012

More results

Similar Description - IDH06G65C5_12

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IDH09G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDH10G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW10G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW20G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH20G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW16G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDW12G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH05G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10
	IDW40G65C5	1Mb / 11P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2013-01-15
	IDH04G65C5	1Mb / 13P	ThinQ!??Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Rev. 2.2, 2012-12-10

More results

IDH06G65C5 Datasheet(PDF) 4 Page - Infineon Technologies AG

IDH06G65C5 Datasheet(HTML) 4 Page - Infineon Technologies AG

Similar Part No. - IDH06G65C5_12

Similar Description - IDH06G65C5_12

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL