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IDH04G65C5 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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IDH04G65C5 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 13 page 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Rev. 2.2, 2012-12-10 1 Description Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC 1) for target applications Breakdown voltage tested at 9 mA 2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC; VR=400V 7 nC EC; VR=400V 1.4 µJ IF @ TC < 150°C 4 A Table 2 Pin Definition Pin 1 Pin 2 Pin 3 C A n.a. Type / ordering Code Package Marking Related links IDH04G65C5 PG-TO220-2 D0465C5 www.infineon.com/sic IDH04G65C5 5 th Generation thinQ!™ SiC Schottky Diode ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. 1 2 |
Similar Part No. - IDH04G65C5_12 |
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Similar Description - IDH04G65C5_12 |
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