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AO4932 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4932 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 9 page  AO4932 Asymmetric Dual N-Channel MOSFET General Description Product Summary FET1(N-Channel) FET2(N-Channel) VDS= 30V 30V ID= 11A (VGS=10V) 8A (VGS=10V) RDS(ON) RDS(ON) < 12.5m (VGS=10V) < 19m (VGS=10V) < 15m (VGS=4.5V) < 23m (VGS=4.5V) 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested The AO4932 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. SOIC-8 Top View Bottom View SRFET TM G1 D2 D2 S2/D1 S2/D1 G2 Top View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D2 D1 Symbol VDS VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJL Maximum Junction-to-Lead °C/W °C/W Maximum Junction-to-Ambient A D 32 40 74 90 RθJA 48 Maximum Junction-to-Ambient A 62.5 °C/W Thermal Characteristics Parameter Typ Max Units °C A mJ Avalanche energy L=0.1mH C -55 to 150 TA=70°C 11 Junction and Storage Temperature Range Power Dissipation B 2 1.3 PD TA=25°C 1.3 18 2 30 8 A ±20 V 6.5 40 19 W V ±12 Absolute Maximum Ratings TA=25°C unless otherwise noted Max FE1 Drain-Source Voltage 30 Max FET2 Gate-Source Voltage Units Parameter Pulsed Drain Current C Continuous Drain Current Avalanche Current C 11 ID TA=25°C TA=70°C 9 60 15 Pin1 S1 G1 S2/D1 S2/D1 G2 S2 G1 S1 Rev 4: Nov 2011 www.aosmd.com Page 1 of 9 |
Similar Part No. - AO4932_11 |
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Similar Description - AO4932_11 |
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