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AO4818 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4818 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AO4818 30V Dual N-channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 8A RDS(ON) (at VGS=10V) <19m Ω RDS(ON) (at VGS = 4.5V) < 23m Ω ESD Protected 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAS, IAR EAS, EAR TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJL W 2 Maximum Junction-to-Lead °C/W °C/W Maximum Junction-to-Ambient A D 32 90 40 Maximum Junction-to-Ambient A TA=25°C TA=70°C Power Dissipation B PD Avalanche energy L=0.1mH C Pulsed Drain Current C Continuous Drain Current TA=25°C A ID 8 6.5 48 mJ Avalanche Current C 18 A 19 The AO4818 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 30V V ±20 Gate-Source Voltage Drain-Source Voltage 30 °C/W RθJA 48 74 62.5 °C Thermal Characteristics Units Parameter Typ Max 1.3 TA=70°C Junction and Storage Temperature Range -55 to 150 G D S G D S G1 S1 G2 S2 D1 D1 D2 D2 2 4 5 1 3 8 6 7 Top View SOIC-8 Top View Bottom View Pin1 Rev 7 : Feb. 2011 www.aosmd.com Page 1 of 6 |
Similar Part No. - AO4818_11 |
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Similar Description - AO4818_11 |
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