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AO4812 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AO4812
Description  30V Dual N-Channel MOSFET
Download  5 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4812 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AO4812 Datasheet HTML 1Page - Alpha & Omega Semiconductors AO4812 Datasheet HTML 2Page - Alpha & Omega Semiconductors AO4812 Datasheet HTML 3Page - Alpha & Omega Semiconductors AO4812 Datasheet HTML 4Page - Alpha & Omega Semiconductors AO4812 Datasheet HTML 5Page - Alpha & Omega Semiconductors  
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AO4812
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
1.2
1.8
2.4
V
ID(ON)
30
A
25
30
TJ=125°C
40
48
33
42
m
gFS
15
S
VSD
0.76
1
V
IS
2.5
A
Ciss
255
310
pF
Coss
45
pF
Crss
35
50
pF
Rg
1.6
3.25
4.9
Qg(10V)
5.2
6.3
nC
Qg(4.5V)
2.55
3.2
nC
Qgs
0.85
nC
Qgd
1.3
nC
tD(on)
4.5
ns
tr
2.5
ns
tD(off)
14.5
ns
tf
3.5
ns
trr
8.5
ns
Qrr
2.2
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Input Capacitance
Output Capacitance
Turn-On Rise Time
IF=6A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Body Diode Reverse Recovery Charge
VDS=VGS ID=250µA
VGS=4.5V, ID=5A
Forward Transconductance
Body Diode Reverse Recovery Time
VGS=10V, ID=6A
Reverse Transfer Capacitance
IF=6A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
m
VGS=10V, VDS=15V, RL=2.5Ω,
RGEN=3Ω
DYNAMIC PARAMETERS
Turn-Off DelayTime
Turn-On DelayTime
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VDS=5V, ID=6A
RDS(ON)
Static Drain-Source On-Resistance
IDSS
µA
Zero Gate Voltage Drain Current
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=15V, ID=6A
Gate Source Charge
Gate Drain Charge
IS=1A,VGS=0V
Diode Forward Voltage
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=10V, VDS=5V
VDS=0V, VGS=±20V
Gate-Body leakage current
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
Rev 9: February 2011
www.aosmd.com
Page 2 of 5


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