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AO4812 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4812 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 5 page AO4812 Symbol Min Typ Max Units BVDSS 30 V VDS=30V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.2 1.8 2.4 V ID(ON) 30 A 25 30 TJ=125°C 40 48 33 42 m Ω gFS 15 S VSD 0.76 1 V IS 2.5 A Ciss 255 310 pF Coss 45 pF Crss 35 50 pF Rg 1.6 3.25 4.9 Ω Qg(10V) 5.2 6.3 nC Qg(4.5V) 2.55 3.2 nC Qgs 0.85 nC Qgd 1.3 nC tD(on) 4.5 ns tr 2.5 ns tD(off) 14.5 ns tf 3.5 ns trr 8.5 ns Qrr 2.2 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Input Capacitance Output Capacitance Turn-On Rise Time IF=6A, dI/dt=100A/µs VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Body Diode Reverse Recovery Charge VDS=VGS ID=250µA VGS=4.5V, ID=5A Forward Transconductance Body Diode Reverse Recovery Time VGS=10V, ID=6A Reverse Transfer Capacitance IF=6A, dI/dt=100A/µs Maximum Body-Diode Continuous Current m Ω VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω DYNAMIC PARAMETERS Turn-Off DelayTime Turn-On DelayTime Gate resistance VGS=0V, VDS=0V, f=1MHz VDS=5V, ID=6A RDS(ON) Static Drain-Source On-Resistance IDSS µA Zero Gate Voltage Drain Current Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=15V, ID=6A Gate Source Charge Gate Drain Charge IS=1A,VGS=0V Diode Forward Voltage Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=10V, VDS=5V VDS=0V, VGS=±20V Gate-Body leakage current A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. Rev 9: February 2011 www.aosmd.com Page 2 of 5 |
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